Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects

III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which has enabled significant energy savings the last decade. Despite wide application GaN LEDs, transport mechanisms across InGaN/GaN heterostructures these devices not well explained. Fixed polarization sheet charges at interfaces lead to large interface dipole charges, create potential barriers overcome. One-dimensional models for such predict turn-on voltages that significantly higher than found real devices. As result, conventional cannot performance new designs as longer wavelength LEDs or multi-quantum LEDs. In this work, we show incorporating low indium compositions within quantum wells submicrometer scale can provide an accurate prediction characteristics GaN/InGaN diodes.